| Q vs-8ETLo6Pbl=, Vs-8ETL06-N3, Vs-8ETL06FPPbF, VS-8ETL06FP-N37 Www'ViShay'C°m Vishay Semiconductors DYNAMIG REcovERY cHARAcTE Tlcs (TC 25 0C unless otherwise specified) PARAMETER TEST CONDITIONS IF : 1 A, dlF/dt : 100 A/us, VR : 30 V _ IF:8A,dlF/dt:100A/us,vR:30v Reverse recovew time u:aAPeak recovery current d|F/dt : 200 A/UsVH : 390 V Reverse recovery charge THERMAL - MEcHANIcAL sPEcIFIcATIoNs PARAMETER TEST coNDlTloNS Maximum Junction and Storage temperature range Thermal resistance,junction to case (FULL_pAK) Thermal resistance, _ . . . Typical socket mount Junction to ambient per legThermal resistance, Mounting surface, flat, smooth case to heatsink and greased Mounting torque Case style TO—220AC Marking deviceCase style TO-220 FU LL-PAK 8ETL06FP 100 jjj A 2 10 Ti 150 C j 1 TE 3 E 3 § E 1 u =W Ui“ 0E I; 3 0.1 M m _'u 3 E u- I _m 0.01 0.001 VF - Forward Voltage Drop (V) V“ - Reverse voltage (v) Fig. 1 — Typical Forward Voltage Drop Characteristics Fig. 2 — Typical Values of Reverse Current vs. Reverse Voltage Revision: 02-Jan-12 2 Document Number: 94028 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIshay.com/doc?91000 |